Visible and Infrared Photoresponse in (V _0.99 Cr _0.01 ) ₂ O ₃ epitaxial films

Herein, an infrared (IR) photodetector has been demonstrated by depositing the (V 0.99 Cr 0.01 ) 2 O 3 films on top of a sapphire (Al 2 O 3 ) wafer. The photoresponse properties, including photocurrent, voltage, responsivity, and response speed, at different temperatures and wavelengths are explored. The results showed that the deposited samples produce a significant photoresponse in the near‐IR (NIR) light. In particular, as temperature increases from 298 K (25 °C) to 453 K (180 °C), the responsivity of (V 0.99 Cr 0.01 ) 2 O 3 films improves from 7.4 to 49.4 mA W −1 under 5 V biased 940 nm laser irradiation, and it holds the quick response for about 5 s. The findings indicate that (V 0.99 Cr 0.01 ) 2 O 3 film is a promising candidate material for IR photodetector and temperature‐dependent optical delay triggers.