Argon Plasma treated Silver-Nanowire-based Perovskite Light Emitting Diode

During the recent decade, various approaches have been utilized to fabricate a commercial Perovskite Light Emitting Diode (PeLED), and, till now, acceptable progress has been made. Despite this, to increase the efficiency of these devices to reach their maximum, it is necessary to modify and optimize them after each development, at each stage. One of the most important options to enhance is the interface between two different layers. In this work, we first used atmospheric Ar-Plasma treated Silver-Nanowire (Ag-NW) to fabricate PeLEDs as a new generation of solid-state light sources. Results demonstrate that the Ag-NW work function increases after exposing Ar-Plasma, and it is one of the easiest cost-effective ways to reduce injection barrier height. Also, modifying the barriers reduces the contact angle for four different treatment times. Besides, sheet resistance reduces, and Ag-NWs’ transparency increases. Therefore, it can provide a positive change in surface morphology and consequently a better coverage for the next layer; so that, the current density increases, which means that the injected carriers are effectively increased; so that, the luminance of the devices reaches 30,000 cd m−2 from 8000 cd m−2.