Optimization of the Field Plate Design of a 1200 V P-Gan Power High-Electron-Mobility Transistor

Chia-Hao Liu,Chong-Rong Huang,Hsiang-Chun Wang, Yi-Jie Kang,Hsien-Chin Chiu,Hsuan-Ling Kao,Kuo-Hsiung Chu,Hao-Chung Kuo,Chih-Tien Chen,Kuo-Jen Chang

Micromachines（2022）

引用 1|浏览16

关键词

dynamic on-state resistance (R-on),field plate (FP),high-temperature gate bias (HTGB),high-temperature reverse bias (HTRB),normally off operation,off-state breakdown voltage,p-GaN high-electron-mobility transistor (HEMT)

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