Synergistic effect of total ionizing dose and electromagnetic interference in current reference circuits using scaling-down SOI technologies

This paper studies the behavior characteristics of the same structure circuits manufactured by three different technology nodes in the synergistic environment of total ionizing dose (TID) irradiation and electromagnetic interference (EMI). The experimental results show that the irradiation degrade the EMI immunity of the circuit with larger process feature size. Concurrently, the irradiation induces the abnormal startup problem of the circuit in the complex noise frequency domain environment, and the larger the technology feature size of the circuit can make the starting problem of the circuit worse.