A Simple Edge Termination Design for Vertical GaN P-N Diodes

Prakash Pandey,Tolen M. Nelson,William M. Collings,Michael R. Hontz,Daniel G. Georgiev,Andrew D. Koehler,Travis J. Anderson,James C. Gallagher,Geoffrey M. Foster,Alan Jacobs,Mona A. Ebrish,Brendan P. Gunning,Robert J. Kaplar,Karl D. Hobart,Raghav Khanna

IEEE transactions on electron devices/IEEE transactions on electron devices（2022）

Cited 15|Views54

Key words

Doping,Semiconductor process modeling,Electric breakdown,Implants,Gallium nitride,Junctions,Resistance,Breakdown,edge termination,gallium nitride (GaN),TCAD,vertical diodes

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