Tunable terahertz phase shifter based on GaAs semiconductor technology

We devised an electronically controllable plasmonic modulator capable of changing the phase of the transmitted electromagnetic wave. It is based on a well-established GaAs semiconductor technology. We demonstrate the phase tunability of the device over the range of up to 41 degrees at the insertion loss of -2.2 dB. The phase shifter operates at frequencies of up to 0.27 THz and temperatures of up to 80 K. The design is readily scalable to a planar phased array-a key component in beamforming technologies used in THz communication. Published under an exclusive license by AIP Publishing.