The correlation between carrier escape and injection in InGaN/GaN light-emitting diodes

The processes of carrier escape and injection in InGaN/GaN LEDs have been studied separately and the underlying correlation between these two processes has been overlooked for a long time. In this study, the behavior of photogenerated carriers in LEDs is discussed which shows that the process of carrier escape and injection share the same transport channel. It is further confirmed by comparing the forward voltage under electrical excitation and open-circuit voltage under photo-excitation with the same luminous intensity. These results will not only deepen our understanding of device physics but also guide the design of devices used for display and detection. (C) 2022 The Japan Society of Applied Physics