Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current

A. M. Ivanov, A. V. Klochkov

Technical Physics(2024)

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摘要
A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN/GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20
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关键词
degradation of ultraviolet light-emitting diodes,increase in quantum efficiency,slowing down the aging
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