Highly-confined, low-loss visible photonics using foundry-fabricated Silicon Nitride circuits

Conference on Lasers and Electro-Optics(2022)

引用 0|浏览10
暂无评分
摘要
In this paper, we present CMOS-foundry-fabricated silicon nitride photonic structures at barium emission wavelengths - 493nm and 650nm. High mode-confinement, low propagation losses, and inverse-designed 3dB splitters are demonstrated.
更多
查看译文
关键词
Silicon Nitride circuits,CMOS-foundry-fabricated silicon nitride photonic structures,barium emission wavelengths - 493nm,high mode-confinement,low propagation losses,highly-confined,low-loss visible photonics,size 650.0 nm,size 493.0 nm,noise figure 3.0 dB
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要