Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices

A.G. Wallace,R.P. King, N. Zhelev,A.H. Jaafar, W. Levason,R. Huang,G. Reid,P.N. Bartlett

Electrochimica Acta（2022）

引用 3|浏览5

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摘要

•For the first time, Sb2S3 was electrodeposited from a single source precursor at anodic potentials in a non-acidic electrolyte.•The voltammetry of the [SbS4]3− anion was explored.•A pulsed electrodeposition allowed for the electrodeposition of a Sb2S3 film free of by-product.•Sb2S3 was demonstrated to be suitable for RRAM applications.

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关键词

Antimony sulfide,Electrodeposition,Single source electrodeposition precursor,Resistive random-access memory

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