A comparative study of structural, vibrational mode, optical and electrical properties of pure nickel selenide (NiSe) and Ce-doped NiSe nanoparticles for electronic device applications

Metal Chalcogenides have attracted considerable attention towards modern electronic device application due to their high abundance, high intrinsic conductivities, optical and electrical properties. Hence, a facile hydrothermal strategy is employed to synthesize pure NiSe and Ce-doped NiSe nanoparticles (NPs). Several characterization techniques are used to analyze the structural, Raman spectra, optical and electrical properties of the produced materials. The X-ray diffraction (XRD) investigations confirm the development of NiSe NPs and doping of Ce in the lattice of NiSe with a hexagonal nanocrystalline structure without any impurity phases. Raman spectra show the intensity of bands is enhanced with the enhancement in particle size due to increase in force constant and these Raman spectra consequences are well matched with XRD and confirm the purity and crystallinenature of the samples. Ultraviolet-visible spectroscopy is used to determine the optical properties. These demonstrations an increase and then decrease in the conduction band of NiSe NPs with the addition of Cecontent, i.e., from 1.92 eV to 1.98 eV and then 1.85 eV with the increase in Ce-content from 3% to 6%. This is endorsed for a high attraction between the metallic ions and the conduction electrons with the variation in particle size. The electrical studies reveal that the electrical characteristics of the prepared NPs improved with the substitution of Ce. The conductivity of the pure and Ce-doped NiSe NPs wasenhanced from 1.48 x 10(-4)to 8.01 x 10(-3) (sic) cm(-1) with the increase in Ce concentration up to 6%, while the resistivity was 6.75 x 10(3) to 1.25 x 10(2) Omega cm.The obtained consequences revealed that the doping the trace amount of Ce3+ improved the structural, vibrational mode, optical, and electrical properties of NiSe NPs.This means that the outcomes can be used for a large range of electronic applications.