60 Co gamma and high energy ion impacts on threshold characteristics and its recovery in N-channel depletion MOSFETs

N-channel depletion MOSFETs are irradiated with 140 MeV silicon ions (Si 10+ ) and 60 Co gamma radiation separately from 100 krad to 100 Mrad of total dose. The current–voltage (I-V) variations in MOSFETs are characterized systematically before and after 140 MeV silicon ion and 60 Co gamma irradiation. Threshold voltage ( V TH ), leakage current ( I L ), density of oxide trapped charges ( ΔN it ) and density of interface trapped charges ( ΔN ot ) are measured. The impact of 60 Co gamma radiation on V TH , I L , ΔN it and ΔN ot of MOSFETs is found to be more when compared to 140 MeV silicon ions. Isothermal annealing studies are performed on the irradiated devices, and the recovery in V TH is observed to be more in the case of 140 MeV silicon ions-irradiated MOSFETs when compared to 60 Co gamma-irradiated MOSFETs.