Ohmic Contact With a Contact Resistivity of 12 Ω ⋅ mm on p-GaN/AlGaN/GaN
IEEE Electron Device Letters(2022)
摘要
A robust ohmic contact process with ultralow contact resistivity on p-GaN/AlGaN/GaN is demonstrated. An in-situ removal of GaO
X
interfacial layer after contact metal deposition is developed. Using the novel Mg/Pt/Au stack as the contact metal, a stable ohmic contact is obtained after 450°C/300 s annealing with ohmic contact resistivity of
$12 \Omega \cdot {\mathrm {mm}}$
(
$1.8\times 10^{-5}\, \Omega \cdot {\mathrm {cm}}^{2}$
). A new ohmic contact formation mechanism on p-GaN/AlGaN/GaN is also proposed.
更多查看译文
关键词
Ohmic contact,Mg/Pt/Au,p-GaN/AlGaN/GaN,non-recessed,P-channel GaN
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要