Robust resistive switching in MoS2-based memristor with Ti top electrode

Nonvolatile memories based on two-dimensional nanomaterials are of significant interest to researchers attempting to achieve robust resistive switching (RS) with simple device integration and low energy consump-tion. In this study, the RS behavior of a MoS2-based memristor was investigated using Ti and Ag as top electrodes (TEs). Compared with the memristor using the Ag TE, that employing the Ti TE not only exhibited substantially enhanced and reproducible endurance performance for up to 104 cycles, but also showed excellent operational uniformity with a coefficient of variation limited to 3.5% and 4.0% for SET and RESET voltages, respectively. Moreover, the Ti TE memristor demonstrated RS behavior after 1 month of storage under ambient conditions. The formation of a TixSy layer at the Ti/MoS(2)interface and the presence of an abundant 1T phase MoS2 (or S vacancy, VS) in the initial state of the MoS2 film contribute to its distinctive properties. This work indicates that suitable TE selection can enable the fabrication of high-performance nonvolatile MoS2-based memristors.