Impact of turn off transients on MOSFET failure during short circuit events

The operation of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in conditions relevant to those found in aerospace is reported. The superlative material properties of silicon carbide enable the reduction in die dimension whilst enhancing the system efficiency, which support the development of electrical systems for aerospace applications. The characteristics of silicon carbide devices under fault conditions relevant to aerospace and the degradation mechanisms have not been thoroughly determined and we show that the turn-off transient is the limiting characteristic. Failure of the transistor arises from the injection of hot carriers in to the oxide dielectric or through thermal failures depending on the device characteristics, placing significant constraints on the development of MOSFET based power electronic circuits for aerospace.