Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (V th ) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity.