X-band epi-BAW resonators

Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN
thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8-12 GHz) of the microwave spectrum. The resonators show a
Q(max)asymptotic to 614 and a figure of merit f.Q asymptotic to 5.6 THz. The material stack of these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility-transistors to a unique RF front end and also enable integration with epitaxial nitride superconductors for microwave filters for quantum computing.
Published under an exclusive license by AIP Publishing.