Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures

Michael E. Levinshtein,Alexander A. Lebedev,Vitali V. Kozlovski,Dmitriy A. Malevsky,Roman A. Kuzmin,Gagik A. Oganesyan

Solid-State Electronics（2022）

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摘要

•The phenomenon of reverse annealing was observed in SiC for the first time.•DLTS spectra cannot be matched with current–voltage characteristics.•I-V characteristics can be restored after irradiation with a dose of 4.5 × 1016 cm−2.

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关键词

Silicon carbide,Schottky diode,Electron irradiation,Annealing,Current–voltage characteristics,DLTS spectra

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