Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically studied. By virtue of the reduced surface states at the sidewall, the performance of NR SBD with the wet-etching process is substantially improved, delivering a forward turn-on voltage of 0.65 V, a current density of similar to 10 kA/cm(2) at 3V, an ideality factor of 1.03, an ON/OFF current ratio of similar to 10(10), and no severe current collapse, along with a reverse breakdown voltage of 772 V. (c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/).