High performance p plus plus -AlGaAs/n plus plus -InGaP tunnel junctions for ultra-high concentration photovoltaics

A p++-AlGaAs: C/n++-InGaP: Te tunnel junction with a record peak tunneling current density of 5518 A/cm(2) was developed. This was achieved by inserting a 6.6 A undoped GaAs quantum well at the junction interface, and the numerical model demonstrated that trap-assisted tunneling contributes to the high peak tunneling current. Furthermore, we found that the p++-AlGaAs: C/n++-InGaP: Si + Te tunnel junctions have lower resistance and better stability than p++-AlGaAs: C/n++-InGaP: Te tunnel junctions in the operating temperature range of the multijunction solar cells, and the peak tunneling current density of the p++-AlGaAs: C/n++-InGaP: Si + Te tunnel junctions excess 3000 A/cm(2) with a voltage drop of 7.5mV at 10000 suns. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement