Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Optics & Laser Technology(2022)

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摘要
•Picosecond laser-induced multiphoton processes was experimentally demonstrated.•Thinner 250 μm 4H-SiC wafers were obtained using the picosecond laser slicing.•The structure and composition of 4H-SiC after laser modification were investigated.
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关键词
Silicon carbide,Picosecond laser,Multiphoton effect,Etching
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