MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

R.R. Reznik,I.V. Ilkiv, K.P. Kotlyar, V.O. Grodchin,E.V. Ubyivovk, N.S. Dragunova,N.V. Kryzhanovskaya, N. Akopian, G.E. Cirlin

2022 International Conference Laser Optics (ICLO)（2022）

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摘要

AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.

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关键词

algaas nanowires,ingaas quantum dots,quantum dots,silicon

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