Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process

The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 omega center dot cm, a carrier concentration of 1.84 x 1018 cm-3 and a mobility of 16.27 cm2 center dot V-1 center dot s-1. In addition, the IV characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.