Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High-Mobility Elemental Tellurium (vol 8, 2200653, 2022)

Elemental Tellurium (Te) is an important p-type semiconductor with wide practical applications. It is currently of great interest as a chiral crystal with broken inversion and mirror symmetries, and its topological nature is under active discussion. Here the Shubnikov-de Haas (SdH) oscillations with a nontrivial pi Berry phase and the quantum linear magnetoresistance (MR) in as-synthesized high-mobility Te single crystals are reported. The vapor transport grown Te shows a hollow hexagonal prism structure with tunable carrier density and high mobility of about 1000 cm(2) V-1 s(-1) at low temperature. For concentration p > 10(17) cm(-3), the conspicuous SdH oscillations map out the dumbbell-shaped Fermi surface and the long-standing peculiar amplitude change with varying magnetic field orientation is explained by careful quantitative analyses. Pulsed magnetic field measurements up to 57 T disclose a quantum linear MR beyond the quantum limit and the Landau fan diagram clearly reveals a topologically nontrivial pi Berry phase. This work paves way for the synthesis of high-mobility Te structures and sheds light onto the intrinsic nontrivial topology of the attractive elemental substance.