A 20-Gb/s wideband AGC amplifier with 26-dB dynamic range in 0.18-μm SiGe BiCMOS

Integration(2021)

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摘要
This paper presents a 20-Gb/s automatic gain control (AGC) amplifier in a 0.18-μm SiGe BiCMOS for high-speed applications. The proposed AGC amplifier compactly consists of a folded Gilbert variable-gain amplifier (VGA), a post amplifier (PA), a 50-Ω output buffer, and AGC loop including an open-loop peak detector (PD), a RC low-pass filter (LPF), and an error amplifier (EA). The AGC amplifier achieves the broadband characteristic by utilizing inductive peaking and capacitive degeneration as well as fT-doubler techniques to overcome the large parasitic capacitances. The proposed AGC circuits together with a linear VGA exhibits a wide gain control range of 45 dB for the received signal strength indication (RSSI). The measured AGC amplifier achieves a maximum gain of 21 dB and a -3-dB bandwidth (BW) of 20.6 GHz, which can support up to 25.4-Gb/s data rate. For the pseudorandom bit sequence (PRBS) length 231–1 with a bit-error rate (BER) of 10−12 at 20 Gb/s, the measured input dynamic range is 26 dB (20–400mVpp) and the peak-to-peak data jitter is less than 8 ps. The AGC amplifier consumes a power of 160 mW from a 3.3-V supply voltage and occupies an area of 850 μm × 850 μm.
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关键词
Automatic gain control (AGC),Wideband gain control,Inductive peaking,Variable-gain amplifier (VGA),SiGe BiCMOS
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