High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

Materials Science and Engineering: B（2022）

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摘要

HRXRD ω-2θ experimental and simulated plots for thin AlN epi-layer (∼100 nm) on SiC Substrate.

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关键词

AlN,MOVPE,Stress,Surface morphology,V/III ratio

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