Comparison of Total Ionizing Dose Effects in 22-Nm and 28-Nm FD SOI Technologies

Zongru Li, Christopher Jarrett Elash,Chen Jin,Li Chen,Jiesi Xing,Zhiwu Yang,Shuting Shi

Electronics（2022）

引用 5|浏览15

关键词

22-nm FD SOI,28-nm FD SOI,Co-60,flip-flop (FF),heavy ion,radiation effects,ring oscillator (RO),static random-access memory (SRAM),total ionizing dose (TID)

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