Vertical GaN trench MOSFETs with step-graded channel doping

Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance (R-ON) to minimize power loss, high output current (I-ON) to maximize driving capability, and large threshold voltage (V-th) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between I-ON, R-ON, and V-th than uniform channel doping. Published under an exclusive license by AIP Publishing.