Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots

We report the results of experimental studies of the photoelectric properties of a p–i–n GaAs photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in the metal–organic vapor-phase epitaxy process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the larger quantum dots (QDs). These peaks were related to the tunneling of the photoexcited electrons between the QDs, including a dissipative one (with emission and absorption of optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between QDs.