Analysis of DC Characteristics in PDSOI pMOSFETs Under the Combined Effect of NBTI and TID

The influence of dc characteristics in partially depleted silicon on insulator (PDSOI) pMOSFETs under different negative bias temperature instability (NBTI) and total ionizing dose (TID) conditions was investigated. The threshold voltage, trans-conductance, and subthreshold swing (SS) of the devices were compared before and after irradiation under NBTI conditions, and the lifetime of the devices was predicted. The contributions of interface-trap charges and oxide-trap charges to the threshold voltage degradation were analyzed under the combined effect of TID and NBTI. Based on the reaction-diffusion (R-D) model, the degradation of device parameters under the combined effect of TID and NBTI was explained in this article.