Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K

•The impact higher temperatures are noticed by the increase of Ioff and the decrease of Ion, on stacked vertically nanowire devices.•The reduction of μr reverberates on the IDS/(W/L) degradation with the increasing of temperature.•VGS,ZTC on vertically stacked nanowire devices are clearly visible until 550 K, for all devices, maintaining VGS around 0.9 V.•DIBL is more impacted for high temperatures and wider devices.