Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions

The interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1-xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x <= 0.2 and Schottky junctions for x >= 0.25. For the forward current density-bias voltage (J-V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J-V characteristics, indicating that the injected carriers from Si to La1-xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface. Published under an exclusive license by AIP Publishing.