Effect of capping layer on the ferroelectricity of hafnium oxide

Jui-Hsuan Chang, Chen-Gui Zheng,Hsuan-Han Chen,Pei-Tien Chen,Cun-Bo Liu,Kai-Yang Huang,Hsiao-Hsuan Hsu,Chun-Hu Cheng,Wu-Ching Chou,Su-Ting Han

Thin Solid Films（2022）

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摘要

•The effect of AlOxcapping layer on HfO2MFM devices wereinvestigated.•Ferroelectric polarization can be significantly improved by AlOxcapping.•Nitrogen plasma treatment on AlOxcan alleviate stress-induced defect traps.•AlOxlayer with nitrogen incorporation further improve electrical stress resistance.

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关键词

Hafnium Oxide,Ferroelectric Polarization,Aluminum Oxide,Capping Layer,Power Consumption

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