Thermal properties of paramagnetic radiation-induced defects in lithium orthosilicate containing breeder material

•Li4SiO4 exposure to photons of different types and energies produces similar effects.•At least seven S = ½ paramagnetic radiation-induced defects are generated.•The paramagnetic defect annealing consists of several stages between 25 °C and 300 °C.•TSL glow curves are well-correlated with the paramagnetic defect annealing kinetics.•Data are in good agreement with the results reported for neutron-irradiated Li4SiO4.