Redox-induced crystallisation in Ti-bearing glass-forming melts: A Ti K-edge XANES study

Mariona Tarrago,Charles Le Losq,Thibaut Robine,Solenn Reguer,Dominique Thiaudiere,Daniel R. Neuville

Materials Letters（2022）

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摘要

•Only Ti4+ was found at high temperature in silicate melts at fO2 between 0.21 and 10−6.•Ti-bearing melts systematically crystallize above 1500 °C under very reducing atmospheres.•Crystallisation might be preferred to reduction.

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关键词

Titanium,Glass,Melt,Crystallisation,XANES,Redox

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