Highly efficient voltage-controlled magnetism in HfZrO/CoFeB hybrid film and Hall device

We investigate the voltage-controlled magnetism effect of HfZrO/CoFeB hybrid film and a Hall device with perpendicular magnetic anisotropy. The magnetization versus magnetic field experiments and anomalous Hall experiments before and after applying voltage are performed. The results exhibit that the coercive field of samples remain unchanged while the saturation magnetization shows a permanent increase (more than 60%), which is regardless of the direction of applied voltage. Different from conventional voltage-controlled magnetic anisotropy, in our work, only the saturation magnetization is enhanced by the applied voltage without trading off other magnetic parameters of CoFeB. Thus, such a finding proposes a more efficient voltage-controlled method to achieve a magnetic memory device with high thermal stability, high tunnel magnetoresistance and low switching current for magneto-resistive random-access memory under scaling beyond 2X nm.