Hysteresis and turn-on voltage tailoring of indium gallium zinc oxide transistors by employing a sandwiched structure with indium oxide

•Transistor with ternary oxide semiconductor shows large hysteresis at low voltage.•Hysteresis can be addressed by improving semiconductor-dielectric interface.•Forming a sandwich structure with In2O3 reduces hysteresis.•Turn-on voltage of transistors is controlled via the In2O3 film thickness.