A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage

Zhenyu Xiang,Yonghui Lin,Chunwei Zhang,Haijun Guo,Yang Li,Wenjing Yue,Song Gao,Hao Kan

Solid-State Electronics（2022）

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摘要

•A novel LDMOS with field plate auxiliary doping layer (FPADL) is proposed to improve the BV of LDMOS with field plate.•The effect and design method of LDMOS with FPADL are studied in detail.•It is proved that the proposed LDMOS with FPADL can improve the BV by 9.52% with the Ron and the fabrication cost maintained.

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关键词

Field plate (FP),Lateral double diffused MOS (LDMOS),Silicon on insulator (SOI),Charge balance,Field plate auxiliary doping layer (FPADL)

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