A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.