Multiscale Simulations of Plasma Etching in Silicon Carbide Structures

Materials Science Forum(2022)

引用 0|浏览7
暂无评分
摘要
Manufacturing of Silicon Carbide (SiC) based devices will soon require the accuracy and control typical of the advanced Si based nanoelectronics. As a consequence, the processes development will surely benefit of technology computer aided design (TCAD) tools dedicated to the current and future SiC process technologies. Plasma etching is one of the most critical and difficult process for optimization procedures in the micro/nanofabrication area, since the resultant 2D (e.g. in trenches) or 3D (e.g in holes) profiling is the consequence of the complex interactions between plasma and materials in the device structures. In this contribution we present a simulation tool dedicated to the etching simulation of SiC structures based on the sequential combination of a plasma scale global model and feature scale Kinetic Monte Carlo simulations. As an example of the approach validation procedure the simulations are compared with the characterization analysis of particular real process results.
更多
查看译文
关键词
etching
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要