Deep-UV Transparent Conducting Oxide La-Doped SrSnO3 with a High Figure of Merit

ACS applied electronic materials(2022)

引用 5|浏览3
暂无评分
摘要
Perovskite stannate SrSnO3 (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3 (SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a(-)a(-)c(+) in the c(+) direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La doped SrSnO3 film has a figure of merit (phi(TC) = 2.65 x 10(-3) omega(-1)) at A = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.
更多
查看译文
关键词
ultraviolet transparent conducting oxides, figure of merit, La-doped SrSnO3, ultrawide band gap semiconductors, thickness-dependent properties
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要