Effect of annealing temperature on resistive switching behavior of Al/ La0.7Sr0.3MnO3 /LaNiO3 devices

La0.7Sr0.3MnO3 (LSMO)/LaNiO3 (LNO) thin films were deposited successively on Si single crystal by the sol-gel method. The bipolar resistive switching (RS) behavior was studied in Al/LSMO/LNO devices. Obvious current hysteresis was observed, the set (reset) voltage and resistance ratio were modulated by the annealing temperature of LSMO thin films. At the annealing temperature of 750 °C, good endurance and retention performance were obtained in the memory device. According to the fitting results of I–V curves, based on Schottky emission model, the conduction mechanisms of Al/LSMO/LNO devices were discussed. Our results may give a valuable insight on developing perovskite-type rare earth manganese oxide.