Codoping of Al and In atoms in β-Ga2O3 semiconductors

Al and In dopants are codoped in β-Ga2O3 nanostructures via hydrothermal synthesis. Unlike single-dopant β-Ga2O3 nanostructures, less mechanical strain is induced in the β-Ga2O3 nanostructures with the codoping of Al and In atoms. This is attributed to the size compensation effect. The induced mechanical strain caused by each dopant in the β-Ga2O3 nanostructures is analyzed using X-ray diffraction. Chemical states are also compared after Al and In doping in the β-Ga2O3 nanostructures. Finally, the photocatalytic properties of various β-Ga2O3 nanostructures at different Al and In concentrations are compared via the decomposition of methylene blue from UVC irradiation with a wavelength of 254 nm. Compared to the single-dopant β-Ga2O3 nanostructures, enhanced photocatalytic activity is obtained with higher dopant concentrations when Al and In atoms are codoped in the β-Ga2O3 nanostructures. This codoping technique could be applied to various applications where higher doping concentrations are advantageous while minimizing the induced lattice deformation of the β-Ga2O3.