Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC

A single-input, dual-output (SIDO) digital gate driver (DGD) IC, integrating two 6-bit DGDs, two current sensors, and a controller, is proposed to equalize the drain current (I D ) variation of two parallel-connected SiC MOSFETs. The DC and surge components of I D of each MOSFET are equalized by digitally controlling the gate voltage amplitude and the gate current at turn-on, respectively. In the double pulse test at 300 V and 40 A using two parallel SiC MOSFETs with different threshold voltages of 0.5 V, the proposed SIDO DGD IC reduces the differences in the DC and surge components of I D of the two MOSFETs from 2.6 A to 0.13 A by 95 % and from 1.9 A to 0.32 A by 83 %, respectively. The automatic equalization of the DC components of I D of the two MOSFETs using SIDO DGD IC is also successfully demonstrated.