Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Perovskite resistive random-access memory (RRAM) is a promising candidate for next-generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low-cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr3 QDs:GO/ITO device is approximate to 1.4 x 10(7), which is 1077 times larger than that in the dark condition (1.3 x 10(4)). The SET/RESET voltages are +2.28/-2.04 V and +1.68/-1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load-cycling. Before and after 10(4) bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 x 10(7) and 2.3 x 10(7), respectively. The ratio values are 8.8 x 10(4) and 2.9 x 10(4) under the dark condition, respectively. This innovative resistive memory based on the CsPbBr3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual-controlled flexible RRAM devices.