SAW Resonator Band-Pass Filter on GaN/Si operating at 8 GHz

This paper presents the design, fabrication and measurements of a GaN/Si surface acoustic wave resonators band pass filter operating at 8 GHz. The design is based on multiphysics simulations, equivalent circuit modelling and 3D electromagnetic analysis. The resonators with electrodes width of 130 nm were fabricated using electron beam lithography and lift-off technique. The measured insertion losses show a minimum value of 13.2 dB at 8.06 GHz and a 20 MHz 3 dB bandwidth. The filter is compact and can be directly integrated in a GaN based X-band monolithic microwave integrated circuit platform.