The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation

In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thick-ness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical ox-ide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.