Spectral nonlinearity of an inverse-layer-type silicon photodiode under over-filled illumination

Optics & Laser Technology（2022）

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摘要

•Realization of spectral nonlinearity under over-filled illumination.•Enables accurate light detection with the wide photocurrent range.•Supporting the reliability of optical measurement under over-filled illumination.

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关键词

Silicon photodetector,Linearity,Radiometry,Photometry,Metrological instrumentation

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