Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi2I7/ITO Structure
ADVANCED MATERIALS INTERFACES（2022）
Key words
AgBi,I-2,(7) perovskite-like film,biodegradability of resistive random access memory devices,ReRAM,resistance switching effect,ultralow power memory devices
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