ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

W.-M. Wu,S.-H. Chen,A. Sibaja-Hernandez,S. Yadav,U. Peralagu,H. Yu,A. Alian,V. Putcha,B. Parvais,G. Groeseneken,M.-D. Ker,N. Collaert

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

引用 5|浏览11

暂无评分

摘要

We report on our extensive experimental and simulation study to understand ESD failure mechanisms in RF GaN-on-Si (MIS)HEMTs. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standard-defined HBM ESD robustness and commonly used TLP failure current was observed in GaN (MIS)HEMTs. Using transient HBM IV characteristics, a novel discharge model is proposed to explain the transient discharge mechanism. The TCAD and SPICE simulations confirmed that the observed mis-correlation between TLP and HBM is attributed to 2DEG channel resistance modulation in response to HBM ESD transient voltage waveforms.

查看译文

关键词

HBM ESD transient voltage waveforms,ESD HBM discharge model,ESD failure mechanisms,ESD clamp transistors,standard-defined HBM ESD robustness,TLP failure current,transient HBM IV characteristics,transient discharge mechanism,RF GaN-on-Si (MIS)HEMT,SPICE simulations,2DEG channel resistance modulation,TCAD,GaN-Si

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要